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Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (LAO/STO) interfaces iscompared between samples prepared in high oxygen partial pressure (PO2) of 10-4mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of10-6 mbar exhibiting 3D conductivity. While MR of an order of magnitude largerwas observed in low PO2 samples compared to those of high PO2 samples, large MRanisotropies were observed in both cases. The MR with the out-of-plane field isalways larger compared to the MR with in-plane field suggesting lowerdissipation of electrons from interface versus defect scattering. The quasi-2Dinterfaces show a negative MR at low temperatures while the 3D interfaces showpositive MR for all temperatures. Furthermore, the angle relationship of MRanisotropy for these two different cases and temperature dependence of in-planeMR are also presented. Our study demonstrates that MR can be used todistinguish the dimensionality of the charge transport and various (defect,magnetic center, and interface boundary) scattering processes in this system.

physical review. b, condensed matter and materials physics

Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3  Heterostructures: Influence of Magnetic Ordering, Interface Scattering and  Dimensionality