English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Transport and magnetic properties have been systematically investigated forSmMnAsO_{1-x} with controlled electron-doping. As the electron band-filling isincreased with the increase of oxygen deficiency (x), the resistivitymonotonically decreases and the transition from Mott-insulator to metal occursbetween x=0.17 and 0.2. Seebeck coefficient at room temperature abruptlychanges around the critical doping level from a large value (\sim -300 \mu V/K)to a small one (\sim -50 \mu V/K) both with negative sign. In the metalliccompounds with x=0.2 and x=0.3, Mn spins order antiferromagnetically around 30K, and the Hall coefficient with the negative sign shows a reduction inmagnitude upon the magnetic transition, indicating the change in the multipleFermi surfaces. Gigantic positive magnetoresistance effect is observed in awide range of temperature, reaching up to 60 % at 2 K for the x=0.3 compound.The effect is attributed to the field-induced change of the complex Fermisurfaces in this multi-orbital correlated electron system.

Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}