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Electron-hole generation and recombination rates for plasmon emission andabsorption in Graphene are presented. The recombination times of carriers dueto plasmon emission have been found to be in the tens of femtoseconds tohundreds of picoseconds range. The recombination times depend sensitively onthe carrier energy, carrier density, temperature, and the plasmon dispersion.Carriers near the Dirac point are found to have much longer lifetimes comparedto carriers at higher energies. Plasmons in a Graphene layer on a polarsubstrate hybridize with the surface optical phonons and this hybridizationmodifies the plasmon dispersion. We also present generation and recombinationrates of carriers due to plasmon emission and absorption in Graphene layers onpolar substrates.

Ultrafast Carrier Recombination and Generation Rates for Plasmon Emission and Absorption in Graphene