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We have studied spin dephasing and spin diffusion in a high-mobilitytwo-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grownin the [110] direction, by a two-beam Hanle experiment. For very low excitationdensity, we observe spin lifetimes of more than 16 ns, which rapidly decreaseas the pump intensity is increased. Two mechanisms contribute to this decrease:the optical excitation produces holes, which lead to a decay of electron spinvia the Bir-Aranov-Pikus mechanism and recombination with spin-polarizedelectrons. By scanning the distance between the pump and probe beams, weobserve the diffusion of spin-polarized electrons over more than 20 microns.For high pump intensity, the spin polarization in a distance of several micronsfrom the pump beam is larger than at the pump spot, due to the reducedinfluence of photogenerated holes.

Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems