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We report on a systematic study of the density dependence of mobility in alow-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T=50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- wasmeasured. This is the highest mobility reported for a 2DHS to date. Using aback-gated sample geometry, the density dependence of mobility was studied from2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit toa power law dependence of the form mu ~ p^alpha using a single exponent alpha.Our data indicate a continuous evolution of the power law with alpha rangingfrom ~ 0.7 at high density and increasing to ~ 1.7 at the lowest densitiesmeasured. Calculations specific to our structure indicate a crossover of thedominant scattering mechanism from uniform background impurity scattering athigh density to remote ionized impurity scattering at low densities. This isthe first observation of a carrier density-induced transition from backgroundimpurity dominated to remote dopant dominated transport in a single sample.

Scattering Mechanisms in a High Mobility Low Density Carbon-Doped (100) GaAs Two-Dimensional Hole System