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We apply the recently introduced Hubbard model approach to quantitativelydescribe the experimental charge stability diagram and tunnel coupling ofsilicon double quantum dot systems. The results calculated from both thegeneralized Hubbard model and the microscopic theory are compared with existingexperimental data, and excellent agreement between theory and experiment isfound. The central approximation of our theory is a reduction of the fullmulti-electron multi-band system to an effective two-electron model, which isnumerically tractable. In the microscopic theory we utilize the Hund-Mullikenapproximation to the electron wave functions and compare the results calculatedwith two different forms of confinement potentials (biquadratic and Gaussian).We discuss the implications of our work for future studies.

Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots