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We report the above-band-gap dielectric-function spectra ! a = ! a1 + i! a2 of single-crystal ZnGeAs2 grown epitaxially on (001)GaAs, and study it theoretically. After surface overlayers were removed chemically to minimize artifacts, pseudodielectric-function spectra ! ! "=! ! 1 "+ i! ! 2 " were acquired ellipsometrically from 1.5 to 6.0 eV with the sample at room temperature. The! a spectra were then extracted by multilayer analysis. The procedureensuresthattheresultisacloseapproximationtothea-axiscomponentofthedielectric-functiontensor ! =! 1 +i! 2 ofZnGeAs2.Thedataexhibitnumerousspectralfeaturesassociatedwithcriticalpoints.Theenergies of these critical points are determined accurately by fitting standard line shapes to second energy derivatives of the data obtained by a combined method of spectral analysis. We compare our results to the predictions of quasiparticle self-consistent GW calculations. Good agreement is achieved for the major critical-point features, and their probable origins are identified.

physical review. b, condensed matter and materials physics

Above-band-gap dielectric functions of ZnGeAs<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Ellipsometric measurements and quasiparticle self-consistent<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">GW</mml:mi></mml:mrow></mml:math>calculations

Above-band-gap dielectric functions of ZnGeAs2: Ellipsometric measurements and quasiparticle self-consistentGWcalculations