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We report low-frequency 1/f noise measurements of degenerately doped Si:P\delta-layers at 4.2K. The noise was found to be over six orders of magnitudelower than that of bulk Si:P systems in the metallic regime and is one of thelowest values reported for doped semiconductors. The noise was found to benearly independent of magnetic field at low fields, indicating negligiblecontribution from universal conductance fluctuations. Instead interaction ofelectrons with very few active structural two-level systems may explain theobserved noise magnitude

Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P \delta-layers