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Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H.

physical review b

Very fast light-induced degradation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>a</mml:mi></mml:mrow></mml:math>-Si:H/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>c</mml:mi></mml:mrow></mml:math>-Si(100) interfaces

Very fast light-induced degradation ofa-Si:H/c-Si(100) interfaces