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Using a real-time renormalization group method we study the minimal model ofa quantum dot dominated by charge fluctuations, the two-lead interactingresonant level model, at finite bias voltage. We develop a set of RG equationsto treat the case of weak and strong charge fluctuations, together with thedetermination of power-law exponents up to second order in the Coulombinteraction. We derive analytic expressions for the charge susceptibility, thesteady-state current and the conductance in the situation of arbitrary systemparameters, in particular away from the particle-hole symmetric point and forasymmetric Coulomb interactions. In the generic asymmetric situation we findthat power laws can be observed for the current only as function of the levelposition (gate voltage) but not as function of the voltage. Furthermore, westudy the quench dynamics after a sudden switch-on of the level-lead couplings.The time evolution of the dot occupation and current is governed by exponentialrelaxation accompanied by voltage-dependent oscillations and characteristicalgebraic decay.

physical review. b, condensed matter and materials physics

A renormalization-group analysis of the interacting resonant level model  at finite bias: Generic analytic study of static properties and quench  dynamics