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Understanding the nature of electrical conductivity, superconductivity andmagnetism between layers of oxides is of immense importance for the design ofelectronic devices employing oxide heterostructures. We demonstrate thatresonant inelastic X-ray scattering can be applied to directly probe thecarriers in oxide heterostructures. Our investigation on epitaxially grownLaAlO3/SrTiO3 superlattices unambiguously reveals the presence of bothlocalized and delocalized Ti 3d carriers. These two types of carriers arecaused by oxygen vacancies and electron transfer due to the polar discontinuityat the interface. This result allows explaining the reported discrepancybetween theoretically calculated and experimentally measured carrier densityvalues in LaAlO3/SrTiO3 heterostructures.

Localized vs. delocalized character of charge carriers in LaAlO3/ SrTiO3 superlattices