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We report a transport study of ultrathin Bi2Se3 topological insulators withthickness from one quintuple layer to six quintuple layers grown by molecularbeam epitaxy. At low temperatures, the film resistance increaseslogarithmically with decreasing temperature, revealing an insulating groundstate. The sharp increase of resistance with magnetic field, however, indicatesthe existence of weak antilocalization, which should reduce the resistance astemperature decreases. We show that these apparently contradictory behaviorscan be understood by considering the electron interaction effect, which plays acrucial role in determining the electronic ground state of topologicalinsulators in the two dimensional limit.

Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit