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We report on terahertz (THz) radiation under electrical pumping from adegenerate semiconductor possessing an electron accumulation layer. In InN, therandom grating formed by topographical defects provides high-efficiencycoupling of surface plasmon polaritons supported by the accumulation layer tothe THz emission. The principal emission band occupies the 2-6 THz spectralrange. We establish a link between the shape of emission spectra and thestructural factor of the random grating and show that the change of slope ofpower dependencies is characteristic for temperature-dependent plasmonicmechanisms. The super-linear rise of a THz emission intensity on appliedelectric power provides advantage of such materials in emission yield.

Terahertz radiation due to random grating coupled surface plasmon polaritons