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Strong electrically tunable exciton g-factors are observed in individual(Ga)InAs self-assembled quantum dots and the microscopic origin of the effectis explained. Realistic eight band k.p simulations quantitatively account forour observations, simultaneously reproducing the exciton transition energy, DCStark shift, diamagnetic shift and g-factor tunability for model dots with themeasured size and a comparatively low In-composition of x(In)~35% near the dotapex. We show that the observed g-factor tunability is dominated by the hole,the electron contributing only weakly. The electric field induced perturbationof the hole wavefunction is shown to impact upon the g-factor via orbitalangular momentum quenching, the change of the In:Ga composition inside theenvelope function playing only a minor role. Our results provide design rulesfor growing self-assembled quantum dots for electrical spin manipulation viaelectrical g-factor modulation.

Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching