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The intrinsic values of the carriers mobility and density of the graphenelayers inside graphite, the well known structure built on these layers in theBernal stacking configuration, are not well known mainly because most of theresearch was done in rather bulk samples where lattice defects hide theirintrinsic values. By measuring the electrical resistance throughmicrofabricated constrictions in micrometer small graphite flakes of a few tensof nanometers thickness we studied the ballistic behavior of the carriers. Wefound that the carriers' mean free path is micrometer large with a mobility$\mu \simeq 6 \times 10^6 $cm$^2$/Vs and a carrier density $n \simeq 7 \times10^8 $cm$^{-2}$ per graphene layer at room temperature. These distinctivetransport and ballistic properties have important implications forunderstanding the values obtained in single graphene and in graphite as well asfor implementing this last in nanoelectronic devices.

Ballistic transport at room temperature in micrometer size multigraphene