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Transport measurements on few layer graphene (FLG) are important as theyinterpolate between the properties of single layer graphene (SLG) as a true2-dimensional material and the 3-dimensional bulk properties of graphite. Inthis article we present 4-probe local charge transport and non-local spin valveand spin precession measurements on lateral spin field-effect transistors (FET)on FLG. We study systematically the charge and spin transport propertiesdepending on the number of layers and the electrical back gating of the device.We explain the charge transport measurements by taking the screening ofscattering potentials into account and use the results to understand the spindata. The measured samples are between 3 and 20 layers thick and we include inour analysis our earlier results of the measurements on SLG for comparison. Inour room temperature spin transport measurements we manage to observe spinsignals over distances up to 10 u m and measure spin-relaxation times up totau_s ~500 ps, about 4 times higher than in SLG. We calculate the density ofstates (DOS) of FLG using a zone-folding scheme to determine the chargediffusion coefficient D_C from the square resistance R_S. The resulting D_C andthe spin diffusion coefficient D_S show similar values and depend only weaklyon the number of layers and gate induced charge carriers. We discuss theimplications of this on the identification of the spin-relaxation mechanism.

Comparison between charge and spin transport in few layer graphene