English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

The integration of ferroelectric polymer gates on a Mn-doped GaAs magnetic channel provides a promising route for the persistent field-effect control of magnetic properties in high-quality diluted magnetic semiconductors (DMSs) that are otherwise incompatible with traditional oxide ferroelectrics. That control demands the thinnest possible DMS layers, for which to date the Curie temperature (T-C) is severely depressed. Here we show that reducing the channel thickness from 7 to 3-4 nm by etching, followed by a brief 135 degrees C anneal, does not degrade the T-C (similar to 70 K) of the 7-nm film. The channel thinning results in a dramatic threefold increase of the T-C shift controlled by the ferroelectric polarization reversal. Furthermore, we obtain the same exponent (partial derivative 1n T-C/partial derivative 1n R) = gamma approximate to -0.3 for all channels with different thicknesses, regardless of the technique used for T-C determination. These results suggest that the ferromagnetic coupling in an ultrathin 3-nm channel is far from the two-dimensional limit and shows a rather bulklike behavior, similar to well-established 7-nm films.

Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels