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In graphene devices with a varying degree of disorders as characterized bytheir carrier mobility and minimum conductivity, we have studied thethermoelectric power along with the electrical conductivity over a wide rangeof temperatures. We have found that the Mott relation fails in the vicinity ofthe Dirac point in high-mobility graphene. By properly taking account of thehigh temperature effects, we have obtained good agreement between the Boltzmanntransport theory and our experimental data. In low-mobility graphene where thecharged impurities induce relatively high residual carrier density, the Mottrelation holds at all gate voltages.

Effect of charged impurities on graphene thermoelectric power near the Dirac point