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We investigate the effect of oxygen-oxygen hopping on the three-bandcopper-oxide model relevant to high-$T_c$ cuprates, finding that the physics ischanged only slightly as the oxygen-oxygen hopping is varied. The location ofthe metal-insulator phase boundary in the plane of interaction strength andcharge transfer energy shifts by $\sim 0.5$eV or less along the charge transferaxis, the quasiparticle weight has approximately the same magnitude and dopingdependence and the qualitative characteristics of the electron-doped andhole-doped sides of the phase diagram do not change. The results confirm theidentification of La$_2$CuO$_4$ as a material with intermediate correlationstrength. However, the magnetic phase boundary as well as higher-energyfeatures of the optical spectrum are found to depend on the magnitude of theoxygen-oxygen hopping. We compare our results to previously published one-bandand three-band model calculations.

physical review. b, condensed matter and materials physics

Role of oxygen-oxygen hopping in the three-band copper-oxide model:  quasiparticle weight, metal insulator and magnetic phase boundaries, gap  values and optical conductivity