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We demonstrate that the spectrum rearrangement can be considered as aprecursor of the metal-insulator transition observed in graphene dosed withhydrogen atoms. The Anderson-type transition is attributed to the coincidencebetween the Fermi level and the mobility edge, which appearance is induced bythe spectrum rearrangement. Available experimental data are thoroughly comparedto the theoretical results for the Lifshitz impurity model.

Metal-insulator transition in hydrogenated graphene as manifestation of quasiparticle spectrum rearrangement of anomalous type