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We describe the influence of hard-wall confinement and lateral dimension on the low-temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/In1-xAlxSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included

physical review. b, condensed matter and materials physics

Ballistic transport and boundary scattering in InSb/In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Sb mesoscopic devices

Ballistic transport and boundary scattering in InSb/In1−xAlxSb mesoscopic devices