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The effect of different surface defects on the atomic and electronicstructures of cubic $\beta$-SiC(110) surface are studied by means of a firstprinciples calculation based on Density Functional Theory using the SIESTAcode. In the calculations, the possibility of different spin population at eachatom is allowed. We find that while adsorption of oxygen or nitrogen andadsorption of hydrogen at the C surface carbon atoms do not induce magneticmoments on SiC(110); Si vacancies, substitutional C at the Si site and H or Fadsorbed at the silicon surface sites induce localized magnetic moments aslarge as 0.7 $\mu_{B}$ at the carbon atoms close to the defect. The localmagnetic moment arrange ment varies from ferromagnetic in the case of Hadsorption to antiferromagnetic in the Si vacancy and substitutional C cases.The case of H adsorption at the Si surface atoms is discussed in detail. It isconcluded that magnetism is mainly due to the local character of the C valenceorbitals.

Theoretical Study of Magnetic Moments Induced by Defects at the SiC (110) Surface