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Inhomogeneous dynamical mean-field theory is employed to calculate thevertex-corrected electronic charge transport for multilayered devices composedof semi-infinite metallic lead layers coupled through a strongly correlatedmaterial barrier region. The barrier region can be tuned from a metal to a Mottinsulator through adjusting the interaction strength and the particle filling.We use the Falicov-Kimball model to describe the barrier region because anexact expression for the vertex corrections is known, allowing us to determinetheir effect on transport. The dc conductivity is calculated and we find theeffects of the vertex corrections are relatively small, manifesting themselvesin a small reduction in the resistance-area product. This reduction saturatesin absolute magnitude as the barrier layer becomes thick, as expected due tothe vanishing nature of the vertex corrections in bulk. The vertex correctionshave a larger relative effect on the resistance-area product for more metallicand thinner devices.

physical review. b, condensed matter and materials physics

Effect of vertex corrections on the longitudinal transport through  multilayered nanostructures: Exact dynamical mean-field theory approach  applied to the inhomogeneous Falicov-Kimball model