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Drift-diffusion theory - which fully describes charge transport insemiconductors - is also universally used to model transport of spin-polarizedelectrons in the presence of longitudinal electric fields. By transforming spintransit time into spin orientation with precession (a technique called the"Larmor clock") in current-sensing vertical-transport intrinsic Si devices, weshow that spin diffusion (and concomitant spin dephasing) can be greatlyenhanced with respect to charge diffusion, in direct contrast to predictions ofspin Coulomb-drag diffusion suppression.

The Larmor clock and anomalous spin dephasing in silicon