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We study a theoretical model of virtual scanning tunneling microscopy (VSTM),a proposed application of interlayer tunneling in a bilayer system to locallyprobe a two-dimensional electron system (2DES) in a semiconductorheterostructure. We consider tunneling for the case where transport in the2DESs is ballistic, and show that the zero-bias anomaly is suppressed byextremely efficient screening. Since such an anomaly would complicate theinterpretation of data from a VSTM, this result is encouraging for efforts toimplement such a microscopy technique.

Local Interlayer Tunneling Between Two-Dimensional Electron Systems in the Ballistic Regime