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We have measured the quantum-interference magnetoresistances in two singleindium tin oxide (ITO) nanowires between 0.25 and 40 K, by using the four-probeconfiguration method. The magnetoresistances are compared with theone-dimensional weak-(anti)localization theory to extract the electrondephasing length $L_\phi$. We found, in a 60-nm diameter nanowire with a lowresistivity of $\rho$(10 K) = 185 $\mu \Omega$ cm, that $L_\phi$ is long,increasing from 150 nm at 40 K to 520 nm at 0.25 K. Therefore, the nanowirereveals strict one-dimensional weak-localization effect up to several tens ofdegrees of Kelvin. In a second 72-nm diameter nanowire with a high resistivityof $\rho$(10 K) = 1030 $\mu \Omega$ cm, the dephasing length is suppressed to$L_\phi$(0.26 K) = 200 nm, and thus a crossover of the effective devicedimensionality from one to three occurs at about 12 K. In particular,disorder-induced spin-orbit coupling is evident in the latter sample,manifesting weak-antilocalization effect at temperatures below $\sim$ 4 K.These observations demonstrate that versatile quantum-interference effects canbe realized in ITO nanowires by controlling differing levels of atomic defectsand impurities.

Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires