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The luminescence caused by the interband transitions of hot carriers ingraphene is considered theoretically. The dependencies of emission in mid- andnear-IR spectral regions versus energy and concentration of hot carriers areanalyzed; they are determined both by an applied electric field and a gatevoltage. The polarization dependency is determined by the angle between thepropagation direction and the normal to the graphene sheet. The characteristicsof radiation from large-scale-area samples of epitaxial graphene and frommicrostructures of exfoliated graphene are considered. The averaged over anglesefficiency of emission is also presented.

Spectral and polarization dependencies of luminescence by hot carriers in graphene