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We present a detailed scanning tunnelling microscopy study which describesthe morphological transition from ripple to dome islands during the growth ofGe on the vicinal Si(1 1 10) surface . Our experimental results show that theshape evolution of Ge islands on this surface is markedly different from thaton the flat Si(001) substrate and is accomplished by agglomeration andcoalescence of several ripples. By combining first principle calculations withcontinuum elasticity theory, we provide an accurate explanation of ourexperimental observations.

Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface