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The fourfold degeneracy of the boron acceptor ground state in silicon, whichis easily lifted by any symmetry breaking perturbation, allows for a stronginhomogeneous broadening of the boron-related electron paramagnetic resonance(EPR) lines, e.g. by a random distribution of local strains. However, since EPRof boron acceptors in externally unstrained silicon was reported for the firsttime, neither the line shape nor the magnitude of the residual broadeningobserved in samples with high crystalline purity were compatible with the lowconcentrations of carbon and oxygen point defects, being the predominant sourceof random local strain. Adapting a theoretical model which has been applied tounderstand the acceptor ground state splitting in the absence of a magneticfield as an effect due to the presence of different silicon isotopes, we showthat local fluctuations of the valence band edge due to different isotopicconfigurations in the vicinity of the boron acceptors can quantitativelyaccount for all inhomogeneous broadening effects in high purity Si with anatural isotope composition. Our calculations show that such an isotopicperturbation also leads to a shift in the g-value of different boron-relatedresonances, which we could verify in our experiments. Further, our resultsprovide an independent test and verification of the valence band offsetsbetween the different Si isotopes determined in previous works.

Isotope effect on electron paramagnetic resonance of boron acceptors in silicon