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Donor states in Si nanodevices can be strongly modified by nearby insulatingbarriers and metallic gates. We report here experimental results indicating astrong reduction in the charging energy of isolated As dopants in Si FinFETsrelative to the bulk value. By studying the problem of two electrons bound to ashallow donor within the effective mass approach, we find that the measuredsmall charging energy may be due to a combined effect of the insulatorscreening and the proximity of metallic gates.

Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch