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The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for thetuning of the magnetic easy axis from in-plane to perpendicular-to-planewithout the need for a (Ga,In)As template. For perpendicular easy axis, usingmagneto-optical imaging a self-organized pattern of up- and down-magnetizeddomains is observed for the first time in a diluted magnetic semiconductor.Combining Kerr microscopy, magnetometry and ferromagnetic resonancespectroscopy, the exchange constant and the domain wall width parameter areobtained as a function of temperature. The former quantifies the effectiveMn-Mn ferromagnetic interaction. The latter is a key parameter for domain walldynamics. The comparison with results obtained for (Ga,Mn)As/(Ga,In)As revealsthe improved quality of the (Ga,Mn)As$_{1-y}$P$_y$ layers regarding domain wallpinning, an increase of the domain wall width parameter and of the effectiveMn-Mn spin coupling. However, at constant Mn doping, no significant increase ofthis coupling is found with increasing P concentration in the investigatedrange.

Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains