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We report experimental and theoretical investigations of the Hall effect inYbRh2Si2 and its reference compounds LuRh2Si2 and YbIr2Si2. Based onband-structure calculations we identify two bands dominating the Hallcoefficient in all these compounds. For the case of LuRh2Si2 - the non-magneticreference compound of YbRh2Si2 - the temperature dependence of the Hallcoefficient is described quantitatively to arise from two hole-like bands. ForYbIr2Si2 and YbRh2Si2, renormalized band calculations yield two bands ofopposite character. In YbRh2Si2 these two bands almost compensate each other.We present strong indications that the sample dependences of thelow-temperature Hall coefficient observed for YbRh2Si2 arise from slightvariations of the relative scattering rates of the two bands. Minute changes ofthe composition appear to be the origin.

Hall effect measurements on YbRh2Si2 and relatives in the light of electronic structure calculations