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We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness. The results of spin-dependent ballistic transportcalculations reveal options to specifically manipulate the tunnelmagnetoresistance ratio. The resistance area products and the tunnelmagnetoresistance ratios show a monotonous trend with distinct oscillations asa function of the Cr thickness. These modulations are directly addressed andinterpreted by means of magnetic structures in the Cr films and by complex bandstructure effects. The characteristics for embedded Co interlayers areconsiderably influenced by interface resonances which are analyzed by the localelectronic structure.

Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions