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Based on a detailed theoretical examination of the lattice distortion inhigh-index epilayers in terms of continuum mechanics, expressions are deducedthat allow the calculation and experimental determination of the strain tensorfor (hhl)-oriented (Ga,Mn)As layers. Analytical expressions are derived for thestrain-dependent free-energy density and for the resistivity tensor formonoclinic and orthorhombic crystal symmetry, phenomenologically describing themagnetic anisotropy (MA) and anisotropic magnetoresistance (AMR) by appropriateanisotropy and resistivity parameters, respectively. Applying the results to(113)A orientation with monoclinic crystal symmetry, the expressions are usedto determine the strain tensor and the shear angle of a series of(113)A-oriented (Ga,Mn)As layers by high-resolution x-ray diffraction and toprobe the MA and AMR at 4.2 K by means of angle-dependent magnetotransport.Whereas the transverse resistivity parameters are nearly unaffected by themagnetic field, the parameters describing the longitudinal resistivity arestrongly field dependent.

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers