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The electronic band structure of as-grown and doped graphene grown on thecarbon face of SiC is studied by high-resolution angle-resolved photoemissionspectroscopy, where we observe both rotations between adjacent layers andAB-stacking. The band structure of quasi-freestanding AB- bilayers is directlycompared with bilayer graphene grown on the Si-face of SiC to study the impactof the substrate on the electronic properties of epitaxial graphene. Ourresults show that the C-face films are nearly freestanding from an electronicpoint of view, due to the rotations between graphene layers.

Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC