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While evidence of a topologically nontrivial surface state has beenidentified in surface-sensitive measurements of Bi2Se3, a significantexperimental concern is that no signatures have been observed in bulktransport. In a search for such states, nominally undoped single crystals ofBi2Se3 with carrier densities approaching 10^16 cm^-3 and very high mobilitiesexceeding 2 m^2 V^-1 s^-1 have been studied. A comprehensive analysis ofShubnikov de Haas oscillations, Hall effect, and optical reflectivity indicatesthat the measured electrical transport can be attributed solely to bulk states,even at 50 mK at low Landau level filling factor, and in the quantum limit. Theabsence of a significant surface contribution to bulk conduction demonstratesthat even in very clean samples, the surface mobility is lower than that of thebulk, despite its topological protection.

Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals