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A theoretical model for the calculation of the phonon-drag thermopower,$S^{g}$, in degenerately doped semiconducting single-wall carbon nanotubes(SWCNTs) is proposed. Detailed calculations of $S^{g}$ are performed as afunction of temperature, tube radius and position of the Fermi level. We derivea simple analytical expression for $S^{g}$ that can be utilized to determinethe free carrier density in doped nanotubes. At low temperatures $S^{g}$ showsan activated behavior characteristic of the one-dimensional (1D) character ofcarriers. Screening effects are taken into account and it is found that theydramatically reduce the magnitude of $S^{g}$. Our results are compared withprevious published experimental data in bulk p-doped SWCNT materials. Excellentagreement is obtained in the temperature range 10-200 K for a consistent set ofparameters. This is a striking result in view of the complexity of thesesystems.

Theory of phonon-drag thermopower of extrinsic semiconducting single-wall carbon nanotubes and comparison with previous experimental data