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Using Landau-Ginzburg-Devonshire approach we calculated the equilibriumdistributions of electric field, polarization and space charge in theferroelectric-semiconductor heterostructures containing proper or incipientferroelectric thin films. The role of the polarization gradient and intrinsicsurface energy, interface dipoles and free charges on polarization dynamics arespecifically explored. The intrinsic field effects, which originated at theferroelectric-semiconductor interface, lead to the surface band bending andresult into the formation of depletion space-charge layer near thesemiconductor surface. During the local polarization reversal (caused by theinhomogeneous electric field induced by the nanosized tip of the Scanning ProbeMicroscope (SPM) probe) the thickness and charge of the interface layerdrastically changes, it particular the sign of the screening carriers isdetermined by the polarization direction. Obtained analytical solutions couldbe extended to analyze polarization-mediated electronic transport.

Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures