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We have studied experimentally the low temperature conductivity of mesoscopicsize InAs/GaSb quantum well Hall bar devices in the inverted regime. Using apair of electrostatic gates we were able to move the Fermi level into theelectron-hole hybridization state, and observe a mini gap. Temperaturedependence of the conductivity in the gap shows residual conductivity, whichcan be consistently explained by the contributions from the free as well as thehybridized carriers in the presence of impurity scattering, as proposed byNaveh and Laikhtman [Euro. Phys. Lett., 55, 545-551 (2001)]. Experimentalimplications for the stability of proposed helical edge states will bediscussed.

Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells