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We studied the phase diagram of thin ferroelectric films with incommensuratephases and semiconductor properties within the framework ofLandau-Ginzburg-Devonshire theory. We performed both analytical calculationsand phase-field modelling of the temperature and thickness dependencies of theperiod of incommensurate 180 degree domain structures appeared in thin filmscovered with perfect electrodes. It is found that the transition temperaturefrom the paraelectric into the incommensurate phase as well as the period ofincommensurate domain structure strongly depend on film thickness, and surfaceand gradient energy contributions. The results may provide insight on thetemperature dependence of domain structures in nanosized ferroics with inherentincommensurate phases.

Phase Diagrams and Domain Splitting in Thin Ferroelectric Films with Incommensurate Phases