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We model the quantum confined Stark effect in AlN/GaN/AlN heterostructuresgrown on top of [0001]-oriented GaN nanowires. The pyro- and piezoelectricfield are computed in a self-consistent approach, making no assumption aboutthe pinning of the Fermi level, but including an explicit distribution ofsurface states which can act as a source or trap of carriers. We show that thepyro- and piezoelectric field bends the conduction and valence bands of GaN andAlN and transfers charges from the top surface of the nanowire to an electrongas below the heterostructure. As a consequence, the Fermi level is likelypinned near the valence band of AlN at the top surface. The electron gas andsurface charges screen the electric field, thereby reducing the Stark effect.The efficient strain relaxation further weakens the piezoelectric polarization.We compute the electronic properties of the heterostructures with a sp3d5s*tight-binding model, and compare the theoretical predictions with the availableexperimental data.

Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states