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We have studied the effect of Ge substitution and pressure on theheavy-fermion superconductor CePt3Si. Ge substitution on the Si site acts asnegative chemical pressure leading to an increase in the unit-cell volume butalso introduces chemical disorder. We carried out electrical resistivity and acheat-capacity experiments under hydrostatic pressure on CePt3Si1-xGex (x=0,0.06). Our experiments show that the suppression of superconductivity inCePt3Si1-xGex is mainly caused by the scattering potential, rather than volumeexpansion, introduced by the Ge dopants. The antiferromagnetic order isessentially not affected by the chemical disorder.

Pair breaking by nonmagnetic impurities in the noncentrosymmetric superconductor CePt3Si