English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We probe spin transport in Cu_{2}O by measuring spin valve effect inLa_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co andLa_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/La_{0.7}Sr_{0.3}MnO_{3} epitaxialheterostructures. In La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co systems we find that afraction of out-of-equilibrium spin polarized carrier actually travel acrossthe Cu_{2}O layer up to distances of almost 100 nm at low temperature. Thecorresponding spin diffusion length dspin is estimated around 40 nm.Furthermore, we find that the insertion of a SrTiO_{3} tunneling barrier doesnot improve spin injection, likely due to the matching of resistances at theinterfaces. Our result on dspin may be likely improved, both in terms ofCu_{2}O crystalline quality and sub-micrometric morphology and in terms ofdevice geometry, indicating that Cu_{2}O is a potential material for efficientspin transport in devices based on crystalline oxides.

Cu_{2}O as nonmagnetic semiconductor for spin transport in crystalline oxide electronics