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We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ionimplantation into Ge followed by pulsed laser annealing. Benefiting from theshort time annealing, the hole concentration in Mn-implanted Ge has beenincreased by two orders of magnitude from 10$^{18}$ to over 10$^{20}$cm$^{-3}$. Likely due to the high hole concentration, we observe that thelongitudinal and Hall resistances exhibit the same hysteresis as themagnetization, which is usually considered as a sign of carrier-mediatedferromagnetism.

Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism