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We construct a simple phenomenological diffuse-interface model forcomposition-induced nanopatterning during ion sputtering of alloys. Insimulations, this model reproduces without difficulties the high-aspect ratiostructures and tilted pillars observed in experiments. We investigate the timeevolution of the pillar height, both by simulations and by {\it in situ}ellipsometry. The analysis of the simulation results yields a goodunderstanding of the transitions between different growth regimes and supportsthe role of segregation in the pattern-formation process.

Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking