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The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si arefound to reduce dramatically in isotopically purified 28Si single crystals.Moreover, extremely narrow substructures in the EPR spectra are visiblecorresponding to either an enhancement or a reduction of the absorbed microwaveon resonance. The origin of the substructures is attributed to a combination ofsimultaneous double excitation and spin relaxation in the four level spinsystem of the acceptors. A spin population model is developed whichqualitatively describes the experimental results.

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon