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We study a bilayer two-dimension-electron-gas (2DEG) adjacent to a type-IIsuperconductor thin film with a pinned vortex lattice. We find that withincreasing interlayer tunneling, the system of half filling presents threephases: gapped phase-I (topological insulator), gapless critical phase-II(metal), and gapped phase-III (band insulator). The Hall conductance forphase-I/III is 2/0 $e^{2}/h$, and has non-quantized values in phase-II. Theexcitation (response to topological defect, a local vortex defect) in thesethree phases shows different behaviors due to the topological property of thesystem, including fractional charge $e/2$ for each layer in phase-I. While inthe case of quarter filling, the system undergoes a quantum phase transitionfrom metallic phase to topological insulator phase (with excitation offractional charge $e/4$).

Fractional topological excitations and quantum phase transition in a bilayer 2DEG adjacent to a superconductor film