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La-doped and Y-doped Bi2Sr2CaCu2O8+d (Bi2212) compoundsBi2Sr2-xLax(Ca,Y)Cu2O8+d, which range from the insulator to the deeplyunderdoped superconductor, have been studied by angle-resolved photoemissionspectroscopy. We have observed that the lower Hubbard band (LHB) of the parentinsulator is gradually shifted upward with doping without significantlychanging the band dispersions, which implies a downward shift of the chemicalpotential with hole doping. This behaviour is analogous to Bi2Sr2-xLaxCuO6+d(Bi2201) and Ca2-xNaxCuO2Cl2 (Na-CCOC) but is different from La2-xSrxCuO4(LSCO), where the LHB stays well below the chemical potential and does not movewhile its intensity quickly diminishes in the underdoped region.

Evolution of the electronic structure from the insulator to the superconductor in Bi2Sr2-xLax(Ca,Y)Cu2O8+d