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We present a systematic study of electron backscattering phenomena duringconduction for graphene nanoribbons with single-vacancy scatterers anddimensions within the capabilities of modern lithographic techniques. Ouranalysis builds upon an \textit{ab initio} parameterized semiempirical modelthat breaks electron-hole symmetry and nonequilibrium Green's function methodsfor the calculation of the conductance distribution $g$. The underlyingmechanism is based on wavefunction localizations and perturbations that in thecase of the first $\pi-\pi{}^*$ plateau can give rise to impurity-likepseudogaps with both donor and acceptor characteristics. Confinement andgeometry are crucial for the manifestation of such effects. Self-consistentquantum transport calculations characterize vacancies as local charging centersthat can induce electrostatic inhomogeneities on the ribbon topology.

Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies