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A study of donor electron spins and spin--dependent electronic transitionsinvolving phosphorous ($^{31}$P) atoms in proximity of the (111) orientedcrystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface ispresented for [$^{31}$P] = 10$^{15}$ $\mathrm{cm}^{-3}$ and [$^{31}$P] =10$^{16}$ $\mathrm{cm}^{-3}$ at about liquid $^4$He temperatures ($T = 5$$\mathrm{K} - 15$ $\mathrm{K}$). Using pulsed electrically detected magneticresonance (pEDMR), spin--dependent transitions between the \Phos donor stateand two distinguishable interface states are observed, namely (i) \Pb centerswhich can be identified by their characteristic anisotropy and (ii) a moreisotropic center which is attributed to E$^\prime$ defects of the \sio bulkclose to the interface. Correlation measurements of the dynamics ofspin--dependent recombination confirm that previously proposed transitionsbetween \Phos and the interface defects take place. The influence of theseelectronic near--interface transitions on the \Phos donor spin coherence time$T_2$ as well as the donor spin--lattice relaxation time $T_1$ is theninvestigated by comparison of spin Hahn--echo decay measurements obtained fromconventional bulk sensitive pulsed electron paramagnetic resonance and surfacesensitive pEDMR, as well as surface sensitive electrically detected inversionrecovery experiments. The measurements reveal that both $T_2$ and $T_1$ of\Phos donor electrons spins in proximity of energetically lower interfacestates at $T\leq 13$ K are reduced by several orders of magnitude.

$T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects